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Bulletin I25173 rev. C 03/03
ST303S SERIES
INVERTER GRADE THYRISTORS Stud Version
Features
Center amplifying gate High surge current capability Low thermal impedance High speed performance
300A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM @ 50Hz @ 60Hz I2t @ 50Hz @ 60Hz V DRM /V RRM tq TJ
ST303S
300 65 471 7950 8320 316 288 400 to 1200 10 - 20 - 40 to 125
Units
A C A A A KA2s KA2s V s C
case style TO-209AE (TO-118)
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1
ST303S Series
Bulletin I25173 rev. C 03/03
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 ST303S 08 12
V DRM /V RRM, maximum repetitive peak voltage V
400 800 1200
VRSM , maximum non-repetitive peak voltage V
500 900 1300
I DRM/I RRM max.
@ TJ = TJ max.
mA
50
Current Carrying Capability
Frequency
180oel 50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 670 480 230 35 50 V DRM 50 40
ITM 180 el 470 330 140 50 50 65 1050 1021 760 150 50 V DRM 40
o
ITM 100s 940 710 470 50 65 5240 1800 730 90 50 V DRM 40
ITM
Units
4300 1270 430 50 65 V A/s C A
10 / 0.47F
10 / 0.47F
10 / 0.47F
On-state Conduction
Parameter
I T(AV) Max. average on-state current @ Case temperature I T(RMS) Max. RMS on-state current I TSM Max. peak, one half cycle, non-repetitive surge current
ST303S
300 65 471 7950 8320 6690 7000
Units Conditions
A C DC @ 45C case temperature t = 10ms A t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2s t = 10ms t = 8.3ms KA s
2
180 conduction, half sine wave
No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
I 2t
Maximum I2t for fusing
316 288 224 204
I t
2
Maximum I t for fusing
2
3160
t = 0.1 to 10ms, no voltage reapplied
2
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ST303S Series
Bulletin I25173 rev. C 03/03
On-state Conduction
Parameter
V TM Max. peak on-state voltage
ST303S
2.16 1.44 1.46 0.57
Units
Conditions
ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse
V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 r t2 IH IL Low level value of forward slope resistance High level value of forward slope resistance Maximum holding current Typical latching current
V
(16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max.
m 0.56 600 1000 mA
T J = 25C, I T > 30A T J = 25C, V A= 12V, Ra = 6, I G = 1A
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Max. turn-off time
ST303S
1000 0.80
Units
A/s
Conditions
TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/s VR = 50V, tp = 500s, dv/dt = 200V/s
s 10 - 20
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST303S
500 50
Units
V/s mA
Conditions
TJ = TJ max, linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST303S
60 10 10 20
Units
W A
Conditions
TJ = TJ max, f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -VGM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
V 5 200 3 20 0.25 mA
TJ = TJ max, tp 5ms
TJ = 25C, VA = 12V, Ra = 6 V mA V TJ = TJ max, rated VDRM applied
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ST303S Series
Bulletin I25173 rev. C 03/03
Thermal and Mechanical Specifications
Parameter
TJ Tstg RthJC RthCS T Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque, 10%
ST303S
-40 to 125 -40 to 150 0.10 0.03 48.5 (425)
Units
C
Conditions
DC operation K/W Nm (Ibf-in) g See Outline Table Non lubricated threads Mounting surface, smooth, flat and greased
wt
Approximate weight Case style
535
TO-209AE (TO-118)
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction Units
0.011 0.013 0.017 0.025 0.041 0.008 0.014 0.018 0.026 0.042 K/W
Conditions
TJ = TJ max.
Ordering Information Table
Device Code
ST
1 1 2 3 4 5 6 7 8 9 - Thyristor - Essential part number - 3 = Fast turn off
30
2
3
3
S
4
12
5
P
6
F
7
K
8
0
9
- S = Compression bonding Stud - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) - P = Stud base 3/4" 16UNF-2A - Reapplied dv/dt code (for tq test condition) - tq code - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 1 = Fast-on terminals (Gate and Aux. Cathode Leads)
tq(s) up to 800V tq(s) only for 1000/1200V
dv/dt - tq combinations available
dv/dt (V/s) 10 20 20 200 FN FK FK
4
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ST303S Series
Bulletin I25173 rev. C 03/03
Outline Table
CERAMIC HOUSING
22 (0.87) MAX. 4.3 (0.17) DIA. 4.5 (0.18) MAX.
9. 5( 0 .3 7) MI N.
WHITE GATE 10.5 (0.41) NOM. RED SILICON RUBBER RED CATHODE 38 (1.50) MAX. DIA. 255 (10.04) 245 (9.65) 245 (9.65) 10 (0.39) FLEXIBLE LEAD C.S. 50mm 2 (0.078 s.i.)
22 (
0.8 6)
WHITE SHRINK RED SHRINK
27.5 (1.08)
MAX.
SW 45
3/4"16 UNF-2A 49 (1.92) MAX.
21 (0.82) MAX.
47 (1.85) MAX.
Case Style TO-209AE (TO-118)
All dimensions in millimeters (inches)
* FOR METRIC DEVICE: M24 X 1.5 - LENGHT 21 (0.83) MAX. CONTACT FACTORY
Maximum Allowable Case T emperature (C)
Maximum Allowable Case T emperature (C)
130 120 110 100 90 80 70 60 0 50 100 150 200 250 300 350 Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Conduc tion Angle
130 120 110 100 90 80 70 60 50 40 0 100
S 303SS T eries RthJC (DC) = 0.10 K/ W
S 303SS T eries RthJC (DC) = 0.10 K/ W
MI N.
Fast-on Terminals
AMP. 280000-1 REF-250
Conduction Period
30 60 90 120 180
30 60 90 120 200
180
DC 400 500
300
Average On-s tate Current (A)
Fig. 2 - Current Ratings Characteristics
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5
ST303S Series
Bulletin I25173 rev. C 03/03
Maximum Average On-state Power Loss (W) 600
h Rt
03 0.
500
400 300
200
180 120 90 60 30 RMSLimit
Conduction Angle
K/ W 0. 08 K/ 0.1 W 2K /W 0.1 6K /W 0.2 K/ W 0.3 K/ W
0.5 K / W
0. 06
W K/
SA
= 01 0. W K/ ta el -D R
100 0 0 50 100 150
S 303SS T eries T = 125C J
200
250
300 25
50
75
100
125
Average On-state Current (A)
Maximum Allowab le Ambient T emperature (C)
Fig. 3 - On-state Power Loss Characteristics
Maximum Average On-state Power Los (W) s
900 800 700 600 500
400 300
DC 180 120 90 60 30
R
A= 0. 0. 03 01 K/ K/ W W 0.0 -D 6K el /W ta th S
0.1 2
R
RMSLimit
K/ W
Conduction Period
200 100 0 0
S 303SS T eries T = 125C J
0.2 K/ W 0.3 K/ W 0.5 K/ W
50 100 150 200 250 300 350 400 450 500 25 Average On-state Current (A)
50
75
100
125
Maximum Allowable Ambient T emperature (C)
Fig. 4 - On-state Power Loss Characteristics
Peak Half S Wave On-s ine tate Current (A)
Peak Half S Wave On-state Current (A) ine
7000 6500 6000 5500 5000 4500 4000 3500 3000 1
At Any R ated Load Condition And With R ated VRRM Applied Following S urge. Initial T = 125C J @60 Hz 0.0083 s @50 Hz 0.0100 s
8000 7500
Maximum Non Repetitive S urge Current Versus Pulse T rain Duration. Control Of Conduction May Not Be Maintained. 7000 Initial T = 125C J No Voltage Reapplied 6500 Rated VRRM Reapplied 6000 5500 5000 4500 4000 S 303SS T eries 3500 3000 0.01 0.1 Pulse T rain Duration (s)
Fig. 6 - Maximum Non-repetitive Surge Current
S 303S S T eries
10
100
1
Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-repetitive Surge Current
6
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ST303S Series
Bulletin I25173 rev. C 03/03
T ransient T hermal Impedance Z thJC (K/ W)
10000 Instantaneous On-state Current (A)
1 S teady S tate Value R thJC = 0.10 K/ W (DC Operation) 0.1
1000 T = 25C J T = 125C J S 303S S T eries 100 1 2 3 4 5 6 7 8 Instantaneous On-state Voltage (V)
0.01 S 303S S T eries
0.001 0.001
0.01
0.1
1
10
S quare Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 7 - On-state Voltage Drop Characteristics
Maximum Reverse Recovery Charge - Qrr (C)
I
300 280 260 240 220 200 180 160 140 120 100 80 10 20 30
T M
= 500 A 300 A 200 A 100 A 50 A
Maximum R everse R ecovery Current - Irr (A)
320
180 160 140 120 100 80 60 40 20 10 S 303S S T eries T = 125 C J
IT = 500 A M 300 A 200 A 100 A 50 A
S 303S S T eries T = 125 C J
40 50
60 70 80 90 100
20 30
40 50
60 70 80 90 100
Rate Of Fall Of On-state Current - di/ dt (A/ s)
Fig. 9 - Reverse Recovered Charge Characteristics
Rate Of Fall Of On-state Current - di/ dt (A/ s)
Fig. 10 - Reverse Recovery Current Characteristics
1E4
Peak On-state Current (A)
1E3
1000 1500 2000
500
400 200 100
50 Hz
1000 500 400 200 100
50 Hz
1E2
2500
S nubb er circ uit Rs = 10 ohms Cs = 0.47 F V D = 80% VDRM S 303SS T eries S inusoidal pulse T = 40C C
1500
S nubb er circuit Rs = 10 ohms Cs = 0.47 F V D = 80% VDRM S 303SS T eries S inusoidal pulse TC = 65C
tp
tp
1E1 1E1
1E2
1E3
1E4 1E1 1E 1E1 4
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 11 - Frequency Characteristics
Pulse Basewidth (s)
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ST303S Series
Bulletin I25173 rev. C 03/03
1E4
Peak On-state Current (A)
1E3
500 1000 1500
400 200
100
50 Hz
400 500 1000 1500 200
100
50 Hz
1E2
2000 2500
S nub ber c ircuit Rs = 10 ohms Cs = 0.47 F V D = 80% VDRM
S nub ber c ircuit R s = 10 ohms C s = 0.47 F V D = 80% VDRM S 303SS T eries T pezoidal pulse ra T = 65C C di/ dt = 50A/ s
1E1
S 303SS T eries T rapezoidal pulse T = 40C C di/ dt = 50A/ s
2000
1E0 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
Pulse Basewidth (s)
1E4
Peak On-state Current (A)
1E3
500 1000
400
200 100
50 Hz
400 500 200 100
50 Hz
1E2
1500 2000 2500
S nub ber circ uit Rs = 10 ohms Cs = 0.47 F V D = 80% VDRM S 303SS T eries T rapezoidal pulse T = 40C C di/ dt = 100A/ s
1000 1500
S nub ber c irc uit R s = 10 ohms C s = 0.47 F V D = 80% VDRM S 303SS T eries T pezoidal pulse ra T = 65C C di/ dt = 100A/ s
1E1
2000 tp
tp
1E0 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
Pulse Basewidth (s)
1E 5
S 303SS T eries Rec ta ngular pulse d i/d t = 50A/ s 20 joules p er pulse 10 5 2 1 0.5
S 303SS T eries S inusoidal pulse
Peak On-state Current (A)
tp
1E 4
3 5 10 2 1 0.5 0.4
20 joules p er pulse
1E 3
3
1E 2
0.4
tp
1E 1 1E 1
1E2
1E3
1E4 1E 1E 1E 1 4 1
1E2
1E3
1E 4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
8
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ST303S Series
Bulletin I25173 rev. C 03/03
100 Instantaneous Gate Voltage (V) Rec tangular gate pulse a) R ommended load line for ec rated di/ dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/ dt : 10V, 10ohms 10 tr<=1 s (b)
T j=-40 C T j=25 C T j=125 C
(1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, (a)
tp tp tp tp
= 20ms = 10ms = 5ms = 3.3ms
1 VGD IGD 0.1 0.001 0.01
(1)
(2)
(3) (4)
Device: S 303S S T eries 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 03 /03
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